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Scanning electron microscopy

SEM: "AURIGA TM" - Crossbeam base system, Zeiss

High-resolution scanning electron microscope with Schottky field emission cathode

High-resolution scanning electron microscopy is suitable for a wide range of applications in the field of materials characterisation and, due to its high depth of focus, is preferred for imaging unevenly structured surfaces. In addition, it is used to characterise micro- and nanostructures for materials research and development as well as for quality assurance and damage analysis.

Application examples

  • Morphological examination of cross-sections to elucidate layer structures
  • Phase distribution in plastic blends
  • Investigation of surface topography
  • Fracture surfaces in plastic components
  • Media attacks and their material wear phenomena
  • Defective surface coatings, roughnesses
  • Crazes, cracks, fibre-matrix adhesion, fibre distribution
  • Pigment and filler distribution
  • Analysis of material inhomogeneities (blowholes, inclusions)
  • Structure measurement
  • Detection and measurement of impurities
  • Investigations by means of material contrast
  • Spherulite structures and processing influence
  • EDX X-ray micro-range analysis for material identification

Specimen properties

  • Specimen thickness: max. 30 mm,
  • Specimen diameter: max. 50 mm,
  • Specimen condition: flat or structured,
  • dry no outgassing, vacuum resistant

Specification of the scanning electron microscope

  • Computer-controlled FE-REM for analysis and imaging in high-vacuum operation
  • Specified spatial resolution (SE): 1.9 nm at 1 kV and 1.0 nm at 20 kV in high vacuum at optimum working distance
  • Accelerating voltage 0.1-30 kV
  • thermal Schottky emitter
  • in-lens secondary electron detector (InLens), high resolution SE imaging even at low accelerating voltage
  • Chamber SE detector (SE)
  • Energy selective backscattered electron detector (EsB)
  • automatic IGP turbomolecular pumping system
  • 6-axis motorised, eucentric sample stage, (travel 100 x 100 mm in xy-direction)
  • digital image memory with max. 3072x2304 pixels
  • GIS charge compensator (gas inlet to reduce electrical charge)
  • Bruker Quantax 400 EDX system, including 129 eV detector for qualitative and quantitative elemental analysis in the range of approx. 1 µm